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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4327 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 35V(Min) *Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max)@ (IC= 5A, IB= 0.3A) *Complement to Type 2SA1643 B APPLICATIONS *Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 50 V 35 V 7 V 7 A 25 W .cn mi e IC Collector Current-Continuous PC Collector Power Dissipation @TC=25 TJ Junction Temperature 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4327 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 35 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.3A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.3A B 1.2 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product ww w scs .i VEB= 7V; IC= 0 IC= 5A; VCE= 2V IE= -1A; VCE= 12V .cn mi e 50 10 A 10 A 115 MHz isc Websitewww.iscsemi.cn 2 |
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